onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G NTMFD4902NFT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 025799-NTMFD4902NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.16W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 13.3A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G - 025799-NTMFD4902NFT1G - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - NTMFD4902NFT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - NTMFD4902NFT1GOSTR-ND - DigiKey
    DigiKey
  • Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi - 02AC3808 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFD4902NFT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 025799-NTMFD4902NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.16W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 13.3A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G - 025799-NTMFD4902NFT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G
025799-NTMFD4902NFT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G 025799-NTMFD4902NFT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025799-NTMFD4902NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.16W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 13.3A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 025799-NTMFD4902NFT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Maximum Power Dissipation: 1.1W, 1.16W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.3A, 13.3A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 1150pF @ 15V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial

Buy Now Datasheet
FET, MOSFET Arrays - NTMFD4902NFT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTMFD4902NFT1G
FET, MOSFET Arrays NTMFD4902NFT1G
MOSFET 2N-CH 30V 8DFN

MOSFET 2N-CH 30V 8DFN

Supplier's Site Datasheet
FET, MOSFET Arrays - NTMFD4902NFT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTMFD4902NFT1GOSTR-ND
FET, MOSFET Arrays NTMFD4902NFT1GOSTR-ND
Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical)

Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Buy Now Datasheet
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi - 02AC3808 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi
02AC3808
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi 02AC3808
MOSFET, DUAL N-CH, 30V, 13.5A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 13.5A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; PowerRoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTMFD4902NFT1G
MOSFET NTMFD4902NFT1G
MOSFET NFET SO8FL 30V 10.8A 7MO

MOSFET NFET SO8FL 30V 10.8A 7MO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFD4902NFT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFD4902NFT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFD4902NFT1G
MOSFET 2N-CH 30V 10.3A 8DFN

MOSFET 2N-CH 30V 10.3A 8DFN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 025799-NTMFD4902NFT1G NTMFD4902NFT1G NTMFD4902NFT1GOSTR-ND 02AC3808 NTMFD4902NFT1G NTMFD4902NFT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4902NFT1G FET, MOSFET Arrays FET, MOSFET Arrays Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual), Schottky
V(BR)DSS 30 volts 30 volts
PD 1100 to 1160 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) 8-PowerTDFN 8-PowerTDFN TO-3 8-PowerTDFN
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