onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G NTMFD4901NFT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 138386-NTMFD4901NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Family Name: NTMFD4901NF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 17.9A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): RJK03P9DPA-00-J5A; RJK03P9DPA-00#J5A; AON6978; ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G - 138386-NTMFD4901NFT1G - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - NTMFD4901NFT1GOSTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFD4901NFT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi - 02AC3807 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 138386-NTMFD4901NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Family Name: NTMFD4901NF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 17.9A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): RJK03P9DPA-00-J5A; RJK03P9DPA-00#J5A; AON6978; ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G - 138386-NTMFD4901NFT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G
138386-NTMFD4901NFT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G 138386-NTMFD4901NFT1G
Manufacturer: ON Semiconductor Win Source Part Number: 138386-NTMFD4901NFT1 G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Family Name: NTMFD4901NF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Maximum Power Dissipation: 1.1W, 1.2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A, 17.9A Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 1150pF @ 15V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): RJK03P9DPA-00-J5A; RJK03P9DPA-00#J5A; AON6978; ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 138386-NTMFD4901NFT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Family Name: NTMFD4901NF
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Maximum Power Dissipation: 1.1W, 1.2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.3A, 17.9A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 1150pF @ 15V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): RJK03P9DPA-00-J5A; RJK03P9DPA-00#J5A; AON6978;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - NTMFD4901NFT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTMFD4901NFT1GOSTR-ND
FET, MOSFET Arrays NTMFD4901NFT1GOSTR-ND
Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 17.9A 1.1W, 1.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical)

Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 17.9A 1.1W, 1.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFD4901NFT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFD4901NFT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFD4901NFT1G
MOSFET 2N-CH 30V 10.3A 8DFN

MOSFET 2N-CH 30V 10.3A 8DFN

Supplier's Site
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi - 02AC3807 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi
02AC3807
Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi 02AC3807
MOSFET, DUAL N-CH, 30V, 13.5A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 13.5A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; PowerRoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTMFD4901NFT1G
MOSFET NTMFD4901NFT1G
MOSFET NFET SO8FL 30V 10.8A 7MO

MOSFET NFET SO8FL 30V 10.8A 7MO

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138386-NTMFD4901NFT1G NTMFD4901NFT1GOSTR-ND NTMFD4901NFT1G 02AC3807 NTMFD4901NFT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFD4901NFT1G FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 30V, 13.5A, Dfn; Transistor Polarity Onsemi MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
PD 1100 to 1200 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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