onsemi Integrated Circuits (ICs) - Specialized ICs NTMFD001N03P9

The NTMFD001N03P9 is a dual N-channel power MOSFET from Quarktwin Technology Ltd. designed for applications such as DC-DC converters and system voltage rails. It features a compact footprint of 5x6 mm, making it suitable for space-constrained designs. The device has a maximum drain-to-source voltage of 30 V and offers low on-resistance values, with RDS(on) ratings of 5.0 mOc at 10 V and 6.5 mOc at 4.5 V for one channel, and 0.75 mOc at 10 V and 0.9 mOc at 4.5 V for the other channel, which helps minimize conduction losses. The MOSFET supports continuous drain currents of up to 57 A and 165 A for the two channels, respectively, at a case temperature of 25¬8C. It is also RoHS compliant and free from lead, halogens, and brominated flame retardants. The device is characterized by low gate charge and capacitance, which reduces driver losses, making it efficient for high-frequency applications. The operating temperature range is from -55¬8C to 150¬8C, ensuring reliability in various environments.