Dual P-Channel JFET -20V -6A 33mΩ SOIC-8 Product overview: NTMD6P02R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -20V, -6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, -6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD6P02R2G can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 4.8A 750mW Surface Mount 8-SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 025798-NTMD6P02R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 750mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.8A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 1700pF @ 16V
Maximum Rds On at Id,Vgs: 33 mOhm @ 6.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
MOSFET 2P-CH 20V 4.8A 8SOIC
P CHANNEL MOSFET, -20V, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:880mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:880mV RoHS Compliant: Yes
MOSFET 2P-CH 20V 4.8A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NTMD6P02R2G | NTMD6P02R2GOSDKR-ND | 025798-NTMD6P02R2G | NTMD6P02R2G | NTMD6P02R2G | 09R9661 | NTMD6P02R2G |
| Product Name | P-Channel Dual -20V -6A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD6P02R2G | FET, MOSFET Arrays | MOSFET | P Channel Mosfet, -20V, Soic; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| PD | 750 milliwatts | 750 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
