onsemi FET, MOSFET Arrays NTMD6N04R2G

Mosfet Array 2 N-Channel (Dual) 40V 4.6A 1.29W Surface Mount 8-SOIC

MOSFET 2N-CH 40V 4.6A 8SOIC

Manufacturer: ON Semiconductor
Win Source Part Number: 127465-NTMD6N04R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 1.29W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 900pF @ 32V
Maximum Rds On at Id,Vgs: 34 mOhm @ 5.8A, 10V
Alternative Parts (Cross-Reference): DMN4034SSD-13; NVMD6N04R2G; TPC8227-H;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMD6N04R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 40V, 4.6A, 34 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD6N04R2G can be used for catalog matching and distributor lookup.