onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD6N03R2G NTMD6N03R2G

Manufacturer: ON Semiconductor
Win Source Part Number: 013562-NTMD6N03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 1.29W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 950pF @ 24V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Dual N-Ch MOSFET 30V 6A 32mR SOIC Product overview: NTMD6N03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 6A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD6N03R2G can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 6A 1.29W Surface Mount 8-SOIC