MOSFET 2N-CH 20V 3.92A 8SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 013561-NTMD6N02R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NTMD6N02
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 730mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.92A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 1100pF @ 16V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): Si9925DY-T1-E3; Si9925DY-E3; Si9925DY; Si9925DY-T1;
Introduction Date: November 20, 2000
ECCN: EAR99
Country of Origin: Philippines, United States of America
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Dual N-Ch MOSFET 20V 6.5A 35mR SOIC-8 Product overview: NTMD6N02R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 6.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 6.5A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD6N02R2G can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 3.92A 730mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 3.92A 730mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 3.92A 730mW Surface Mount 8-SOIC
MOSFET 2N-CH 20V 3.92A 8SOIC
N CHANNEL MOSFET, 20V, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTMD6N02R2G | 013561-NTMD6N02R2G | 289-NTMD6N02R2G | NTMD6N02R2GOSTR-ND | NTMD6N02R2G | 70K4028 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD6N02R2G | Dual 20V 6.5A SOIC MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 20V, Soic; Channel Type Onsemi |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 3920 milliamps | 6500 milliamps |
