Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC
MOSFET Dual N-Channel 30V 4A SOIC8
MOSFET Dual N-Channel 30V 4A SOIC8
MOSFET Dual N-Channel 30V 4A SOIC8
Manufacturer: ON Semiconductor
Win Source Part Number: 025797-NTMD4N03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 400pF @ 20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 4A 8SOIC
N CHANNEL MOSFET, 30V, 4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.048ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 4A, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.048ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
MOSFET 2N-CH 30V 4A 8SOIC
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTMD4N03R2GOSTR-ND | 7800674 | 7800674P | 025797-NTMD4N03R2G | NTMD4N03R2G | 10N9583 | 50AC6493 | NTMD4N03R2G | NTMD4N03R2G |
| Product Name | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4N03R2G | FET, MOSFET Arrays | N Channel Mosfet, 30V, 4A, Soic; Transistor Polarity Onsemi | Mosfet, Dual N-Ch, 30V, 4A, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | SOT3; 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 2 | ||||||||
| V(BR)DSS | 30 volts | 30 volts |
