onsemi FET, MOSFET Arrays NTMD4840NR2G

Description
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 680mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 680mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTMD4840NR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTMD4840NR2GOSTR-ND
FET, MOSFET Arrays NTMD4840NR2GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 680mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 4.5A 680mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - NTMD4840NR2G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTMD4840NR2G
FET, MOSFET Arrays NTMD4840NR2G
MOSFET 2N-CH 30V 4.5A 8SOIC

MOSFET 2N-CH 30V 4.5A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4840NR2G - 025796-NTMD4840NR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4840NR2G
025796-NTMD4840NR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4840NR2G 025796-NTMD4840NR2G
Manufacturer: ON Semiconductor Win Source Part Number: 025796-NTMD4840NR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 680mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 520pF @ 15V Maximum Rds On at Id,Vgs: 24 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 025796-NTMD4840NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 680mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 520pF @ 15V
Maximum Rds On at Id,Vgs: 24 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMD4840NR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMD4840NR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMD4840NR2G
MOSFET 2N-CH 30V 4.5A 8SOIC

MOSFET 2N-CH 30V 4.5A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET SO8 30V 7.5A 0.034R

MOSFET NFET SO8 30V 7.5A 0.034R

Buy Now Datasheet
Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi - 75M5226 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi
75M5226
Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi 75M5226
DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.016ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTMD4840NR2GOSTR-ND NTMD4840NR2G 025796-NTMD4840NR2G NTMD4840NR2G NTMD4840NR2G 75M5226
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4840NR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Onsemi
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SOIC TO-3
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 4500 milliamps 5500 milliamps
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