P-Channel 30V 2.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC
Dual P-Channel FETKY™ Power MOSFET -30V -4.0A 95mΩ, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMD4184PFR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -30V, -4.0A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -30V, -4.0A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMD4184PFR2G can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 2.3A 8SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 209353-NTMD4184PFR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 770mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4.2nC @ 4.5V
Max Input Capacitance: 360pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 95 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
P CHANNEL MOSFET, -30V, 3.3A, SOIC, FULL REEL; Channel Type:P Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes
MOSFET P-CH 30V 2.3A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTMD4184PFR2GOSTR-ND | 278-NTMD4184PFR2G | NTMD4184PFR2G | 209353-NTMD4184PFR2G | 95M6998 | NTMD4184PFR2G |
| Product Name | Single FETs, MOSFETs | P-Channel Dual -30V -4.0A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD4184PFR2G | P Channel Mosfet, -30V, 3.3A, Soic, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SOIC | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |
| PD | 770 milliwatts | 770 milliwatts | 770 milliwatts | 1600 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
