Manufacturer: ON Semiconductor
Win Source Part Number: 025794-NTMD3P03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 730mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.34A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 750pF @ 24V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Dual P-Channel MOSFET -30V, -3.05A, 85mR, SOIC-8 Product overview: NTMD3P03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -30V, -3.05A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -30V, -3.05A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD3P03R2G can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC
MOSFET 2P-CH 30V 2.34A 8SOIC
P CHANNEL MOSFET, -30V, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.05A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, P-CH, -30V, -3.05A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.05A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.05A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2P-CH 30V 2.34A 8SOIC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 025794-NTMD3P03R2G | 289-NTMD3P03R2G | NTMD3P03R2GOSTR-ND | NTMD3P03R2G | 09R9660 | 50AC6492 | NTMD3P03R2G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD3P03R2G | P-Channel Dual -30V -3.05A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | P Channel Mosfet, -30V, Soic; Transistor Polarity Onsemi | Mosfet, P-Ch, -30V, -3.05A, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 730 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SOIC | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 |
