onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD2P01R2G NTMD2P01R2G

Manufacturer: ON Semiconductor
Win Source Part Number: 060661-NTMD2P01R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 710mW
Drain-Source Breakdown Voltage: 16V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 750pF @ 16V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Mosfet Array 2 P-Channel (Dual) 16V 2.3A 710mW Surface Mount 8-SOIC

Small Signal MOSFET 16V 2.3A 100 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMD2P01R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 16V, 2.3A, 100 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 16V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD2P01R2G can be used for catalog matching and distributor lookup.