Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMD2C02R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTMD2C02R2G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 060660-NTMD2C02R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.2A, 3.4A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 1100pF @ 10V
Maximum Rds On at Id,Vgs: 43 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 20V 5.2A, 3.4A 2W Surface Mount 8-SOIC
MOSFET N/P-CH 20V 5.2A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-NTMD2C02R2G | 060660-NTMD2C02R2G | NTMD2C02R2GOS-ND | NTMD2C02R2G |
| Product Name | Dual SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMD2C02R2G | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| PD | 2000 milliwatts | 2000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |