The product is a Dual P-Channel MOSFET with a maximum drain-to-source voltage of -20V and a continuous drain current rating of -1.7A. It features a low on-resistance of 0.16 ohms, which helps minimize conduction losses. The device is designed for surface mount applications and is compliant with RoHS standards. It operates effectively in various temperature ranges and is suitable for applications requiring efficient power management. The package type is UDFN-6, which allows for compact designs and efficient thermal performance. This MOSFET is ideal for engineers looking for reliable performance in low-voltage applications.
MOSFET 2P-CH 20V 1.3A 6UDFN
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 500mW Surface Mount 6-UDFN (1.6x1.6)
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 500mW Surface Mount 6-UDFN (1.6x1.6)
Mosfet Array 2 P-Channel (Dual) 20V 1.3A 500mW Surface Mount 6-UDFN (1.6x1.6)
Manufacturer: ON Semiconductor
Win Source Part Number: 025791-NTLUD3A260PZT
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NTLUD3A260PZ
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-UDFN (1.6x1.6)
Maximum Power Dissipation: 500mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.2nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Rds On at Id,Vgs: 200 mOhm @ 2A, 4.5V
Alternative Parts (Cross-Reference): DMP2200UFCL-7; NTLUD3A260PZTBG;
Introduction Date: August 19, 2010
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
MOSFET, DUAL P-CH, -20V, -1.7A, UDFN-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 20V 1.3A 6UDFN
MOSFET POWER MOSFET 20V 2A 200 M
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTLUD3A260PZTAG | NTLUD3A260PZTAGOSTR-ND | 025791-NTLUD3A260PZTAG | 42AC1824 | NTLUD3A260PZTAG | NTLUD3A260PZTAG |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLUD3A260PZTAG | Mosfet, Dual P-Ch, -20V, -1.7A, Udfn-6; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 1300 milliamps | 1700 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
