onsemi FET, MOSFET Arrays NTLTD7900ZR2G

Description
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)
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Description
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)
Request a Quote Datasheet

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Description
Supplier Links
FET, MOSFET Arrays - NTLTD7900ZR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTLTD7900ZR2GOSTR-ND
FET, MOSFET Arrays NTLTD7900ZR2GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)

Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G - 103647-NTLTD7900ZR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G
103647-NTLTD7900ZR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G 103647-NTLTD7900ZR2G
Manufacturer: ON Semiconductor Win Source Part Number: 103647-NTLTD7900ZR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro8 Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 15pF @ 16V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 103647-NTLTD7900ZR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 15pF @ 16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLTD7900ZR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLTD7900ZR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8DFN

MOSFET 2N-CH 20V 6A 8DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTLTD7900ZR2GOSTR-ND 103647-NTLTD7900ZR2G NTLTD7900ZR2G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-VDFN Exposed Pad SOT3; Micro8
Polarity N-Channel
V(BR)DSS 20 volts
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