onsemi FET, MOSFET Arrays NTLTD7900ZR2G

Description
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTLTD7900ZR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTLTD7900ZR2GOSTR-ND
FET, MOSFET Arrays NTLTD7900ZR2GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)

Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surface Mount 8-DFN (3x3), (MICRO8 LEADLESS)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G - 103647-NTLTD7900ZR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G
103647-NTLTD7900ZR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G 103647-NTLTD7900ZR2G
Manufacturer: ON Semiconductor Win Source Part Number: 103647-NTLTD7900ZR2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro8 Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 15pF @ 16V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 103647-NTLTD7900ZR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 15pF @ 16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel Dual 20V 9A MOSFET Transistor
289-NTLTD7900ZR2G
N-Channel Dual 20V 9A MOSFET Transistor 289-NTLTD7900ZR2G
Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless, DFN* 3.3x3.3 (MICRO-8 LEADLESS), 3000-REEL Product overview: NTLTD7900ZR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 20V, 9A, 26 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLTD7900ZR2G can be used for catalog matching and distributor lookup.

Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless, DFN* 3.3x3.3 (MICRO-8 LEADLESS), 3000-REEL Product overview: NTLTD7900ZR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 20V, 9A, 26 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLTD7900ZR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLTD7900ZR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLTD7900ZR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8DFN

MOSFET 2N-CH 20V 6A 8DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTLTD7900ZR2GOSTR-ND 103647-NTLTD7900ZR2G 289-NTLTD7900ZR2G NTLTD7900ZR2G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLTD7900ZR2G N-Channel Dual 20V 9A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-VDFN Exposed Pad SOT3; Micro8
Polarity N-Channel N-Channel
V(BR)DSS 20 volts
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