Manufacturer: ON Semiconductor
Win Source Part Number: 025790-NTLJS4114NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 13nC @ 4.5V
Max Input Capacitance: 650pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 35 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
30V N-Ch MOSFET, 35mR RdsOn, 6A ID, WDFN6 Product overview: NTLJS4114NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS4114NT1G can be used for catalog matching and distributor lookup.
N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
MOSFET N-CH 30V 3.6A 6WDFN
MOSFET N-CH 30V 3.6A 6WDFN
N CHANNEL MOSFET, 30V, 7.8A, WDFN6; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:550mV RoHS Compliant: Yes
MOSFET NFET 2X2 30V 7.8A 33mOhm
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025790-NTLJS4114NT1G | 278-NTLJS4114NT1G | NTLJS4114NT1GOSTR-ND | NTLJS4114NT1G | NTLJS4114NT1G | 10N9582 | NTLJS4114NT1G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS4114NT1G | 30V 6A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 7.8A, Wdfn6; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 700 milliwatts | 700 milliwatts | 700 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
