onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NTLJS3180PZTAG

Description
Win Source Part Number: 1140402-NTLJS3180PZT AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: 2156-NTLJS3180PZTAG, 2156-NTLJS3180PZTAG- ONTR-ND,ONSONSNTLJS3 180PZTAG Base Product Number: NTLJS31 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Description
Win Source Part Number: 1140402-NTLJS3180PZT AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: 2156-NTLJS3180PZTAG, 2156-NTLJS3180PZTAG- ONTR-ND,ONSONSNTLJS3 180PZTAG Base Product Number: NTLJS31 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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Datasheet
Datasheet Summary
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The NTLJS3180PZTAG is a P-channel MOSFET designed for battery and load management in portable equipment, housed in a 6-WDFN package measuring 2x2 mm with an exposed drain pad for enhanced thermal conduction. It has a drain-to-source voltage rating of -20 V and a continuous drain current of -3.5 A at 25°C, with a maximum RDS(on) of 38 mΩ at -4.5 V gate bias and -3.0 A drain current. Power dissipation is 700 mW at 25°C ambient temperature. The device is Pb-free, ESD protected, and operates across a junction temperature range of -55°C to 150°C. The package is surface-mount and compatible with SC-88 footprint dimensions.

Datasheet Summary
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The NTLJS3180PZTAG is a P-channel MOSFET designed for battery and load management in portable equipment, housed in a 6-WDFN package measuring 2x2 mm with an exposed drain pad for enhanced thermal conduction. It has a drain-to-source voltage rating of -20 V and a continuous drain current of -3.5 A at 25°C, with a maximum RDS(on) of 38 mΩ at -4.5 V gate bias and -3.0 A drain current. Power dissipation is 700 mW at 25°C ambient temperature. The device is Pb-free, ESD protected, and operates across a junction temperature range of -55°C to 150°C. The package is surface-mount and compatible with SC-88 footprint dimensions.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1140402-NTLJS3180PZTAG - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1140402-NTLJS3180PZTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1140402-NTLJS3180PZTAG
Win Source Part Number: 1140402-NTLJS3180PZT AG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2) Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: 2156-NTLJS3180PZTAG, 2156-NTLJS3180PZTAG- ONTR-ND,ONSONSNTLJS3 180PZTAG Base Product Number: NTLJS31 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Win Source Part Number: 1140402-NTLJS3180PZTAG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: 2156-NTLJS3180PZTAG,2156-NTLJS3180PZTAG-ONTR-ND,ONSONSNTLJS3180PZTAG
Base Product Number: NTLJS31
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1140402-NTLJS3180PZTAG
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity P-Channel
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