Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: ON Semiconductor
Win Source Part Number: 107889-NTLJS2103PTBG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: NTLJS2103P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1157pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3;
Introduction Date: December 12, 2007
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
P-Channel JFET, -12V, 5.9A, 40mΩ, Single, TO-251 Product overview: NTLJS2103PTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS2103PTBG can be used for catalog matching and distributor lookup.
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| Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTLJS2103PTBG | 107889-NTLJS2103PTBG | NTLJS2103PTBGOSCT-ND | 278-NTLJS2103PTBG | NTLJS2103PTBG | NTLJS2103PTBG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG | Single FETs, MOSFETs | P-Channel -12V 5.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | DFN | SOT3; 6-WDFN (2x2) | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |