onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG NTLJS2103PTBG

Manufacturer: ON Semiconductor
Win Source Part Number: 107889-NTLJS2103PTBG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: NTLJS2103P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1157pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3;
Introduction Date: December 12, 2007
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)