onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG NTLJS2103PTBG

Description
Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NTLJS2103PTBG - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG - 107889-NTLJS2103PTBG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG
107889-NTLJS2103PTBG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG 107889-NTLJS2103PTBG
Manufacturer: ON Semiconductor Win Source Part Number: 107889-NTLJS2103PTBG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: NTLJS2103P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-WDFN (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1157pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3; Introduction Date: December 12, 2007 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 107889-NTLJS2103PTBG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: NTLJS2103P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1157pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3;
Introduction Date: December 12, 2007
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - NTLJS2103PTBGOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSCT-ND
Single FETs, MOSFETs NTLJS2103PTBGOSCT-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - NTLJS2103PTBGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSTR-ND
Single FETs, MOSFETs NTLJS2103PTBGOSTR-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - NTLJS2103PTBGOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSDKR-ND
Single FETs, MOSFETs NTLJS2103PTBGOSDKR-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
Singapore
P-Channel -12V 5.9A MOSFET Transistor
278-NTLJS2103PTBG
P-Channel -12V 5.9A MOSFET Transistor 278-NTLJS2103PTBG
P-Channel JFET, -12V, 5.9A, 40mΩ, Single, TO-251 Product overview: NTLJS2103PTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS2103PTBG can be used for catalog matching and distributor lookup.

P-Channel JFET, -12V, 5.9A, 40mΩ, Single, TO-251 Product overview: NTLJS2103PTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 5.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS2103PTBG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLJS2103PTBG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLJS2103PTBG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLJS2103PTBG
MOSFET P-CH 12V 3.5A 6WDFN

MOSFET P-CH 12V 3.5A 6WDFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PFET WDFN6 12V 5.9A 0.025

MOSFET PFET WDFN6 12V 5.9A 0.025

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTLJS2103PTBG 107889-NTLJS2103PTBG NTLJS2103PTBGOSCT-ND 278-NTLJS2103PTBG NTLJS2103PTBG NTLJS2103PTBG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG Single FETs, MOSFETs P-Channel -12V 5.9A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type DFN SOT3; 6-WDFN (2x2) 6-WDFN Exposed Pad 6-WDFN Exposed Pad
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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