onsemi Single FETs, MOSFETs NTLJS2103PTBG

Description
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
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Description
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTLJS2103PTBGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSTR-ND
Single FETs, MOSFETs NTLJS2103PTBGOSTR-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

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Single FETs, MOSFETs - NTLJS2103PTBGOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSCT-ND
Single FETs, MOSFETs NTLJS2103PTBGOSCT-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

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Single FETs, MOSFETs - NTLJS2103PTBGOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTBGOSDKR-ND
Single FETs, MOSFETs NTLJS2103PTBGOSDKR-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
 - NTLJS2103PTBG - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 5.9A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG - 107889-NTLJS2103PTBG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG
107889-NTLJS2103PTBG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG 107889-NTLJS2103PTBG
Manufacturer: ON Semiconductor Win Source Part Number: 107889-NTLJS2103PTBG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Family Name: NTLJS2103P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-WDFN (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1157pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3; Introduction Date: December 12, 2007 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 107889-NTLJS2103PTBG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: NTLJS2103P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1157pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): SiA413DJ-T4-GE3; SiA413ADJ-T4-GE3; SiA413DJ; SiA413DJ-T1-GE3;
Introduction Date: December 12, 2007
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET PFET WDFN6 12V 5.9A 0.025

MOSFET PFET WDFN6 12V 5.9A 0.025

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLJS2103PTBG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLJS2103PTBG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLJS2103PTBG
MOSFET P-CH 12V 3.5A 6WDFN

MOSFET P-CH 12V 3.5A 6WDFN

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTLJS2103PTBGOSTR-ND NTLJS2103PTBG 107889-NTLJS2103PTBG NTLJS2103PTBG NTLJS2103PTBG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTBG MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type 6-WDFN Exposed Pad DFN SOT3; 6-WDFN (2x2) 6-WDFN Exposed Pad
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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