onsemi Single FETs, MOSFETs NTLJS2103PTAG

Description
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet
Description
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTLJS2103PTAG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTLJS2103PTAG-ND
Single FETs, MOSFETs NTLJS2103PTAG-ND
P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

P-Channel 12V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
Singapore
P-Channel -12V -7.7A MOSFET Transistor
278-NTLJS2103PTAG
P-Channel -12V -7.7A MOSFET Transistor 278-NTLJS2103PTAG
Single P-Channel µCool™ Power MOSFET -12V -7.7A 40mΩ, WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch, 3000-REEL Product overview: NTLJS2103PTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, -7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS2103PTAG can be used for catalog matching and distributor lookup.

Single P-Channel µCool™ Power MOSFET -12V -7.7A 40mΩ, WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch, 3000-REEL Product overview: NTLJS2103PTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, -7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTLJS2103PTAG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTAG - 060658-NTLJS2103PTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTAG
060658-NTLJS2103PTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTAG 060658-NTLJS2103PTAG
Manufacturer: ON Semiconductor Win Source Part Number: 060658-NTLJS2103PTAG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-WDFN (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.5A (Ta) Gate-Source Threshold Voltage: 800mV @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1157pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060658-NTLJS2103PTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.5A (Ta)
Gate-Source Threshold Voltage: 800mV @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1157pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLJS2103PTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLJS2103PTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLJS2103PTAG
MOSFET P-CH 12V 3.5A 6WDFN

MOSFET P-CH 12V 3.5A 6WDFN

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTLJS2103PTAG-ND 278-NTLJS2103PTAG 060658-NTLJS2103PTAG NTLJS2103PTAG
Product Name Single FETs, MOSFETs P-Channel -12V -7.7A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJS2103PTAG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type 6-WDFN Exposed Pad SOT3; 6-WDFN (2x2) 6-WDFN Exposed Pad
PD 700 milliwatts 700 milliwatts
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