onsemi FET, MOSFET Arrays NTLJD4116NT1G

Description
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)
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Description
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet

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Description
Supplier Links
FET, MOSFET Arrays - 488-NTLJD4116NT1GCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NTLJD4116NT1GCT-ND
FET, MOSFET Arrays 488-NTLJD4116NT1GCT-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
FET, MOSFET Arrays - 488-NTLJD4116NT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NTLJD4116NT1GDKR-ND
FET, MOSFET Arrays 488-NTLJD4116NT1GDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
FET, MOSFET Arrays - 488-NTLJD4116NT1GTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
488-NTLJD4116NT1GTR-ND
FET, MOSFET Arrays 488-NTLJD4116NT1GTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD4116NT1G - 093463-NTLJD4116NT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD4116NT1G
093463-NTLJD4116NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD4116NT1G 093463-NTLJD4116NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 093463-NTLJD4116NT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-WDFN (2x2) Maximum Power Dissipation: 710mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 6.5nC @ 4.5V Max Input Capacitance: 427pF @ 15V Maximum Rds On at Id,Vgs: 70 mOhm @ 2A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 093463-NTLJD4116NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Maximum Power Dissipation: 710mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 6.5nC @ 4.5V
Max Input Capacitance: 427pF @ 15V
Maximum Rds On at Id,Vgs: 70 mOhm @ 2A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
Dual 30V 4.6A MOSFET Transistor
289-NTLJD4116NT1G
Dual 30V 4.6A MOSFET Transistor 289-NTLJD4116NT1G
Dual N-Ch MOSFET 30V 4.6A 70mR WDFN6 Product overview: NTLJD4116NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLJD4116NT1G can be used for catalog matching and distributor lookup.

Dual N-Ch MOSFET 30V 4.6A 70mR WDFN6 Product overview: NTLJD4116NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLJD4116NT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - NTLJD4116NT1G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTLJD4116NT1G
FET, MOSFET Arrays NTLJD4116NT1G
MOSFET 2N-CH 30V 2.5A 6WDFN

MOSFET 2N-CH 30V 2.5A 6WDFN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NFET 2X2 30V 4.6A 70MOHM

MOSFET NFET 2X2 30V 4.6A 70MOHM

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLJD4116NT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLJD4116NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLJD4116NT1G
MOSFET 2N-CH 30V 2.5A 6WDFN

MOSFET 2N-CH 30V 2.5A 6WDFN

Supplier's Site
Mosfet, Dual N-Ch, 30V, 3.7A, Wdfn; Transistor Polarity Onsemi - 13AC3888 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 30V, 3.7A, Wdfn; Transistor Polarity Onsemi
13AC3888
Mosfet, Dual N-Ch, 30V, 3.7A, Wdfn; Transistor Polarity Onsemi 13AC3888
MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; PowerRoHS Compliant: Yes

MOSFET, DUAL N-CH, 30V, 3.7A, WDFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; PowerRoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, Wdfn6, Full Reel; Transistor Polarity Onsemi - 83K8685 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, Wdfn6, Full Reel; Transistor Polarity Onsemi
83K8685
N Channel Mosfet, 30V, Wdfn6, Full Reel; Transistor Polarity Onsemi 83K8685
N CHANNEL MOSFET, 30V, WDFN6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):0.047ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, WDFN6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):0.047ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 488-NTLJD4116NT1GCT-ND 093463-NTLJD4116NT1G 289-NTLJD4116NT1G NTLJD4116NT1G NTLJD4116NT1G NTLJD4116NT1G 13AC3888 83K8685
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD4116NT1G Dual 30V 4.6A MOSFET Transistor FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 30V, 3.7A, Wdfn; Transistor Polarity Onsemi N Channel Mosfet, 30V, Wdfn6, Full Reel; Transistor Polarity Onsemi
Package Type 6-WDFN Exposed Pad SOT3; 6-WDFN (2x2) 6-WDFN Exposed Pad TO-3 TO-3
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 30 volts 30 volts
PD 710 milliwatts 710 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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