Dual N/P-Channel MOSFET 20V 2.3A 65mR WDFN6 2x2 Product overview: NTLJD3119CTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTLJD3119CTBG can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 102590-NTLJD3119CTBG
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTLJD3119
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Maximum Power Dissipation: 710mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.6A, 2.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.7nC @ 4.5V
Max Input Capacitance: 271pF @ 10V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.8A, 4.5V
Alternative Parts (Cross-Reference): NTLJD3119CTAG;
Introduction Date: October 13, 2006
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
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Mosfet Array N and P-Channel 20V 2.6A, 2.3A 710mW Surface Mount 6-WDFN (2x2)
Mosfet Array N and P-Channel 20V 2.6A, 2.3A 710mW Surface Mount 6-WDFN (2x2)
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-NTLJD3119CTBG | 102590-NTLJD3119CTBG | NTLJD3119CTBGOSTR-ND | NTLJD3119CTBG | 08R3945 | 90W9312 | NTLJD3119CTBG | NTLJD3119CTBG |
| Product Name | P-Channel Dual 20V 2.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3119CTBG | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 20V, Wdfn6; Transistor Polarity Onsemi | Dual Mosfet, N And P Channel, 4.6 A, 20 V, 37 Mohm, 4.5 V, 700 Mv Rohs Compliant Onsemi | FET, MOSFET Arrays | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; N and P-Channel | |||
| PD | 710 milliwatts | 710 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| Package Type | SOT3; 6-WDFN (2x2) | 6-WDFN Exposed Pad | TO-3 | TO-3 | 6-WDFN Exposed Pad |
