onsemi FET, MOSFET Arrays NTLJD3115PTAG

Description
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTLJD3115PTAG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTLJD3115PTAG-ND
FET, MOSFET Arrays NTLJD3115PTAG-ND
Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)

Mosfet Array 2 P-Channel (Dual) 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3115PTAG - 060657-NTLJD3115PTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3115PTAG
060657-NTLJD3115PTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3115PTAG 060657-NTLJD3115PTAG
Manufacturer: ON Semiconductor Win Source Part Number: 060657-NTLJD3115PTAG Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-WDFN (2x2) Maximum Power Dissipation: 710mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 6.2nC @ 4.5V Max Input Capacitance: 531pF @ 10V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060657-NTLJD3115PTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WDFN (2x2)
Maximum Power Dissipation: 710mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 6.2nC @ 4.5V
Max Input Capacitance: 531pF @ 10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTLJD3115PTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTLJD3115PTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTLJD3115PTAG
MOSFET 2P-CH 20V 2.3A 6WDFN

MOSFET 2P-CH 20V 2.3A 6WDFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTLJD3115PTAG-ND 060657-NTLJD3115PTAG NTLJD3115PTAG
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTLJD3115PTAG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-WDFN Exposed Pad SOT3; 6-WDFN (2x2)
Polarity P-Channel
V(BR)DSS 20 volts
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