onsemi Single FETs, MOSFETs NTK3139PT5G

Description
MOSFET P-CH 20V 660MA SOT723
Request a Quote Datasheet
Description
MOSFET P-CH 20V 660MA SOT723
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTK3139PT5G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTK3139PT5G
Single FETs, MOSFETs NTK3139PT5G
MOSFET P-CH 20V 660MA SOT723

MOSFET P-CH 20V 660MA SOT723

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTK3139PT5G - 1083895-NTK3139PT5G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTK3139PT5G
1083895-NTK3139PT5G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTK3139PT5G 1083895-NTK3139PT5G
Manufacturer: ON Semiconductor Win Source Part Number: 1083895-NTK3139PT5G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 310mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-723 Dimension: SOT-723 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 660mA (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Input Capacitance: 170pF @ 16V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 480 mOhm @ 780mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083895-NTK3139PT5G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 310mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-723
Dimension: SOT-723
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 660mA (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Input Capacitance: 170pF @ 16V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 480 mOhm @ 780mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTK3139PT5GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTK3139PT5GOSCT-ND
Single FETs, MOSFETs NTK3139PT5GOSCT-ND
P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

Buy Now Datasheet
Single FETs, MOSFETs - NTK3139PT5GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTK3139PT5GOSTR-ND
Single FETs, MOSFETs NTK3139PT5GOSTR-ND
P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

Buy Now Datasheet
Single FETs, MOSFETs - NTK3139PT5GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTK3139PT5GOSDKR-ND
Single FETs, MOSFETs NTK3139PT5GOSDKR-ND
P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V/6V P CH T1 780mA 0.4

MOSFET 20V/6V P CH T1 780mA 0.4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTK3139PT5G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTK3139PT5G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTK3139PT5G
MOSFET P-CH 20V 660MA SOT723

MOSFET P-CH 20V 660MA SOT723

Supplier's Site
P Ch Mosfet, -20V, 780Ma, Sot-723; Transistor Polarity Onsemi - 08R3937 - Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet, -20V, 780Ma, Sot-723; Transistor Polarity Onsemi
08R3937
P Ch Mosfet, -20V, 780Ma, Sot-723; Transistor Polarity Onsemi 08R3937
P CH MOSFET, -20V, 780mA, SOT-723; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:780mA; On Resistance Rds(on):0.38ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

P CH MOSFET, -20V, 780mA, SOT-723; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:780mA; On Resistance Rds(on):0.38ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, -20V, -0.78A, Sot-723; Transistor Polarity Onsemi - 13AC3887 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -0.78A, Sot-723; Transistor Polarity Onsemi
13AC3887
Mosfet, P-Ch, -20V, -0.78A, Sot-723; Transistor Polarity Onsemi 13AC3887
MOSFET, P-CH, -20V, -0.78A, SOT-723; Transistor Polarity:P Channel; Continuous Drain Current Id:-780mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -0.78A, SOT-723; Transistor Polarity:P Channel; Continuous Drain Current Id:-780mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTK3139PT5G 1083895-NTK3139PT5G NTK3139PT5GOSCT-ND NTK3139PT5G NTK3139PT5G 08R3937 13AC3887
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTK3139PT5G Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Ch Mosfet, -20V, 780Ma, Sot-723; Transistor Polarity Onsemi Mosfet, P-Ch, -20V, -0.78A, Sot-723; Transistor Polarity Onsemi
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 660 milliamps 780 milliamps -780 milliamps
PD 310 milliwatts 310 milliwatts
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