onsemi Single FETs, MOSFETs NTJS4160NT1G

N-Channel 30V 1.8A (Ta) 300mW (Ta) Surface Mount SC-88/SC70-6/SOT-363

Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: NTJS4160NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.2A, 60 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, 60 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTJS4160NT1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 101428-NTJS4160NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 2.75nC @ 4.5V
Max Input Capacitance: 230pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance