MOSFET P-CH 20V 3.3A SC88/SC70-6
P-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
P-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
P-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
Manufacturer: ON Semiconductor
Win Source Part Number: 025782-NTJS4151PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Family Name: NTJS4151P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 850pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.3A, 4.5V
Alternative Parts (Cross-Reference): AO7417; Si1413DH; Si1413DH-T1-E3;
Introduction Date: April 27, 2004
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 3.3A SC88/SC70-6
MOSFET, P CH, -20V, -3.3A, SOT-363-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; PowerRoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 4.2A, SC-88; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 4.2A, SC-88, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1W RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTJS4151PT1G | NTJS4151PT1GOSDKR-ND | 025782-NTJS4151PT1G | NTJS4151PT1G | NTJS4151PT1G | 81Y7048 | 09R9658 | 45J2159 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJS4151PT1G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Ch, -20V, -3.3A, Sot-363-6; Transistor Polarity Onsemi | P Channel Mosfet, -20V, 4.2A, Sc-88; Channel Type Onsemi | P Channel Mosfet, -20V, 4.2A, Sc-88, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 3300 milliamps | 4200 milliamps | 4200 milliamps | 4200 milliamps | ||||
| PD | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts |
