MOSFET N-CH 20V 3.2A SC88/SC70-6
N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
N-Channel JFET, 20V, 3.2A, 60mΩ, SOT-363 Product overview: NTJS3157NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTJS3157NT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025781-NTJS3157NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Family Name: NTJS3157N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 500pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4A, 4.5V
Alternative Parts (Cross-Reference): Si1406DH-T1-GE3; Si1406DH-T1-E3; Si1406DH-T1;
Introduction Date: October 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 20V, 4A, SC-88; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 4A, SC-88; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.06ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 4A, SC-88, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mVRoHS Compliant: Yes
MOSFET N-CH 20V 3.2A SC88/SC70-6
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTJS3157NT1G | NTJS3157NT1GOSCT-ND | 278-NTJS3157NT1G | 025781-NTJS3157NT1G | 50AC6489 | 10N9724 | 71J7049 | NTJS3157NT1G | NTJS3157NT1G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 20V 3.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJS3157NT1G | Mosfet, N-Ch, 20V, 4A, Sc-88; Transistor Polarity Onsemi | N Channel Mosfet, 20V, 4A, Sc-88; Transistor Polarity Onsemi | N Channel Mosfet, 20V, 4A, Sc-88, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 3200 milliamps | 4000 milliamps | 4000 milliamps | 4 milliamps | |||||
| PD | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts |
