MOSFET P-CH 12V 2.7A SC88/SC70-6
P-Channel JFET, -12V, 2.7A, 45mR, SOT-363 Product overview: NTJS3151PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTJS3151PT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025780-NTJS3151PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 625mW (Ta)
Family Name: NTJS3151P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 100μA
Max Gate Charge: 8.6nC @ 4.5V
Max Input Capacitance: 850pF @ 12V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.3A, 4.5V
Alternative Parts (Cross-Reference): RW1A025AP; NTJS3151PT1; NTJS3151P; NTJS3151PT2;
Introduction Date: March 31, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
MOSFET P-CH 12V 2.7A SC88/SC70-6
MOSFET, P-CH, -12V, -2.7A, SC-88; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTJS3151PT1G | 278-NTJS3151PT1G | 025780-NTJS3151PT1G | NTJS3151PT1GOSDKR-ND | NTJS3151PT1G | 50AC6488 | NTJS3151PT1G |
| Product Name | Single FETs, MOSFETs | P-Channel -12V 2.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJS3151PT1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -12V, -2.7A, Sc-88; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 12 volts | 12 volts | |||||
| IDSS | 2700 milliamps | -2700 milliamps | |||||
| PD | 625 milliwatts | 625 milliwatts | 625 milliwatts |
