Dual N-Ch JFET, 60V, 295mA, 1.6Ω, SC-88 Product overview: NTJD5121NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V, 295mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 295mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTJD5121NT1G can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363
MOSFET Dual N-Channel 60V 295mA ESD SC88
MOSFET Dual N-Channel 60V 295mA ESD SC88
MOSFET Dual N-Channel 60V 295mA ESD SC88
Manufacturer: ON Semiconductor
Win Source Part Number: 025779-NTJD5121NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NTJD5121N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 295mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.9nC @ 4.5V
Max Input Capacitance: 26pF @ 20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SSM6N7002KFU,LF; Si1926DL; Si1926DL-T1-E3;
Introduction Date: January 14, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
60V 295mA 1.6Ω@10V,500mA 250mW 2.5V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS
MOSFET 2N-CH 60V 295MA SOT363
MOSFET 2N-CH 60V 0.295A SOT363
DUAL N CHANNEL MOSFET, 60V, SC-88; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:295mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 60V, SC-88, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:295mA; On Resistance Rds(on):1ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET Transistor, Dual N Channel, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V RoHS Compliant: Yes
MOSFET 2N-CH 60V 0.295A SC88
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NTJD5121NT1G | NTJD5121NT1GOSDKR-ND | 7800627 | 7800627P | 025779-NTJD5121NT1G | NTJD5121NT1G | NTJD5121NT1G | NTJD5121NT1G | 598-NTJD5121NT1G | 08R3934 | 90W9311 | NTJD5121NT1G |
| Product Name | Dual 60V 295mA MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD5121NT1G | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | FET, MOSFET Arrays | MOSFET 2N-CH 60V 0.295A SOT363 | Dual N Channel Mosfet, 60V, Sc-88; Transistor Polarity Onsemi | Mosfet Transistor, Dual N Channel, 304 Ma, 60 V, 1 Ohm, 10 V, 1.7 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| PD | 266 milliwatts | 250 milliwatts | 250 milliwatts | 250000 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | 6-TSSOP, SC-88, SOT-363 | Sot-363 (sc-88) | SC-88 | SOT3; SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3 | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE |
