Dual N-Ch JFET, 20V, 630mA, 220mR, SOT-363 Product overview: NTJD4401NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 630mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 630mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTJD4401NT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025778-NTJD4401NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NTJD4401N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 630mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 46pF @ 20V
Maximum Rds On at Id,Vgs: 375 mOhm @ 630mA, 4.5V
Alternative Parts (Cross-Reference): NVJD4401NT1G; BSD235NL6327ZT; BSD235NL6327; BSD235N H6327;
Introduction Date: August 20, 2003
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Surface Mount SC-88/SC70-6/SOT-363
MOSFET 2N-CH 20V 0.63A SC88
DUAL N CHANNEL MOSFET, 20V, SC-88; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET TRANSISTOR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:920mV; Power Dissipation RoHS Compliant: Yes
MOSFET 2N-CH 20V 630MA SOT363
MOSFET 20V Dual N-Channel ESD Protection
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-NTJD4401NT1G | 1841064 | 1841229P | 025778-NTJD4401NT1G | NTJD4401NT1GOSTR-ND | NTJD4401NT1G | 83H7837 | 29X6220 | 70W0111 | NTJD4401NT1G | NTJD4401NT1G |
| Product Name | Dual 20V 630mA MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4401NT1G | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 20V, Sc-88; Transistor Polarity Onsemi | Mosfet, Dual N Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi | Mosfet Transistor; Transistor Polarity Onsemi | FET, MOSFET Arrays | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| PD | 270 milliwatts | 270 milliwatts | |||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| MOSFET Operating Mode | Enhancement | ||||||||||
| Package Type | Sc-88 | SC-88 | SOT3; SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3; SOT3 | TO-3 | 6-TSSOP, SC-88, SOT-363 |
