Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer: ON Semiconductor
Win Source Part Number: 025777-NTJD4158CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTJD4158C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 250mA, 880mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.5nC @ 5V
Max Input Capacitance: 33pF @ 5V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4.5V
Alternative Parts (Cross-Reference): NVJD4158CT1G; NTJD4158CT2G;
Introduction Date: January 12, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET N/P-CH 30V/20V SOT363
MOSFET N/P-CH 30V/20V SC88
DUAL N/P CHANNEL MOSFET, 30V, SC-88; Transistor Polarity:Complementa
MOSFET, N & P-CH COMPLEMENT, 30V, SOT363; Transistor Polarity:N and P Complement; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V;RoHS Compliant: Yes
DUAL N/P CHANNEL MOSFET, 30V, SC-88; Transistor Polarity:Complementa
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTJD4158CT1GOSCT-ND | 025777-NTJD4158CT1G | NTJD4158CT1G | NTJD4158CT1G | 08R3932 | 81Y7046 | NTJD4158CT1G |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4158CT1G | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 30V, Sc-88; Transistor Polarity Onsemi | Mosfet, N & P-Ch Complement, 30V, Sot363; Transistor Polarity Onsemi | MOSFET |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3 | ||
| Polarity | P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| V(BR)DSS | 30 to 20 volts | 30 to 20 volts | |||||
| PD | 270 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
