MOSFET N/P-CH 20V/8V SOT-363
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Dual N/P-Channel JFET, SOT-363, 8V, 775mA, 220mR Product overview: NTJD4105CT2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 8V, 775mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 8V, 775mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTJD4105CT2G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025775-NTJD4105CT2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTJD4105C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 270mW
Drain-Source Breakdown Voltage: 20V, 8V
Continuous Drain Current at 25°C: 630mA, 775mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 46pF @ 20V
Maximum Rds On at Id,Vgs: 375 mOhm @ 630mA, 4.5V
Alternative Parts (Cross-Reference): PJT7600_R1_00001; PJT7600_R2_00001; NTJD4105CT4G;
Introduction Date: January 19, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET 20V/-8V 0.63A/-.775A Complementary
MOSFET N/P-CH 20V/8V 0.63A SC88
MOSFET, N & P-CH, 20V, 0.63A, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTJD4105CT2G | NTJD4105CT2GOSTR-ND | 289-NTJD4105CT2G | 025775-NTJD4105CT2G | NTJD4105CT2G | NTJD4105CT2G | 13AC3885 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | P-Channel Dual 8V 775mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4105CT2G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N & P-Ch, 20V, 0.63A, Sot-363; Transistor Polarity Onsemi |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 to 8 volts | 20 to 8 volts | |||||
| IDSS | 630 milliamps | 630 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
