onsemi Mosfet, N/p Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi NTJD4105CT1G.

Description
MOSFET, N/P CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
Description
MOSFET, N/P CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The NTJD4105C is a complementary N- and P-channel MOSFET pair designed for low-voltage switching applications such as DC-DC conversion and battery-powered devices. It is housed in an SC-88 (SOT-363) package measuring 2.00 mm x 1.25 mm. The N-channel device has a drain-source voltage rating of 20 V and a continuous drain current of 0.63 A at 25°C, while the P-channel device has a drain-source voltage rating of −8.0 V and a continuous drain current of −0.775 A at 25°C. The N-channel on-resistance is 0.29 Ω at VGS = 4.5 V, and the P-channel on-resistance is 0.22 Ω at VGS = −4.5 V. Both devices include ESD protection rated at Class 1. The package is Pb-free and meets RoHS requirements.

Datasheet Summary
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The NTJD4105C is a complementary N- and P-channel MOSFET pair designed for low-voltage switching applications such as DC-DC conversion and battery-powered devices. It is housed in an SC-88 (SOT-363) package measuring 2.00 mm x 1.25 mm. The N-channel device has a drain-source voltage rating of 20 V and a continuous drain current of 0.63 A at 25°C, while the P-channel device has a drain-source voltage rating of −8.0 V and a continuous drain current of −0.775 A at 25°C. The N-channel on-resistance is 0.29 Ω at VGS = 4.5 V, and the P-channel on-resistance is 0.22 Ω at VGS = −4.5 V. Both devices include ESD protection rated at Class 1. The package is Pb-free and meets RoHS requirements.

Suppliers

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Product
Description
Supplier Links
Mosfet, N/p Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi - 26AC2753 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N/p Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi
26AC2753
Mosfet, N/p Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi 26AC2753
MOSFET, N/P CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, N/P CHANNEL, 20V, 0.63A, SOT-363-6; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:630mA; On Resistance Rds(on):0.29ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 26AC2753
Product Name Mosfet, N/p Channel, 20V, 0.63A, Sot-363-6; Transistor Polarity Onsemi
Polarity P-Channel
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