onsemi FET, MOSFET Arrays NTJD4001NT2G

Description
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTJD4001NT2G-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTJD4001NT2G-ND
FET, MOSFET Arrays NTJD4001NT2G-ND
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363

Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4001NT2G - 1083892-NTJD4001NT2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4001NT2G
1083892-NTJD4001NT2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4001NT2G 1083892-NTJD4001NT2G
Manufacturer: ON Semiconductor Win Source Part Number: 1083892-NTJD4001NT2G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Power Dissipation: 272mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 250mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Gate Charge: 1.3nC @ 5V Max Input Capacitance: 33pF @ 5V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1083892-NTJD4001NT2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 272mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.3nC @ 5V
Max Input Capacitance: 33pF @ 5V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTJD4001NT2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTJD4001NT2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTJD4001NT2G
MOSFET 2N-CH 30V 0.25A SC88

MOSFET 2N-CH 30V 0.25A SC88

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTJD4001NT2G-ND 1083892-NTJD4001NT2G NTJD4001NT2G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTJD4001NT2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-88/SC70-6/SOT-363
Polarity N-Channel
V(BR)DSS 30 volts
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