onsemi Single FETs, MOSFETs NTHS4501NT1G

Description
N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™
Request a Quote Datasheet
Description
N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NTHS4501NT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTHS4501NT1GOSTR-ND
Single FETs, MOSFETs NTHS4501NT1GOSTR-ND
N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™

N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4501NT1G - 103646-NTHS4501NT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4501NT1G
103646-NTHS4501NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4501NT1G 103646-NTHS4501NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 103646-NTHS4501NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9.1nC @ 10V Max Input Capacitance: 462pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 38 mOhm @ 4.9A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 103646-NTHS4501NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9.1nC @ 10V
Max Input Capacitance: 462pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 4.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHS4501NT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHS4501NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHS4501NT1G
MOSFET N-CH 30V 4.9A CHIPFET

MOSFET N-CH 30V 4.9A CHIPFET

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTHS4501NT1GOSTR-ND 103646-NTHS4501NT1G NTHS4501NT1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4501NT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-SMD, Flat Leads SOT3; ChipFET 8-SMD, Flat Lead
V(BR)DSS 30 volts
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