onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4111PT1G NTHS4111PT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 116441-NTHS4111PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1500pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

3300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET, 8 PIN Product overview: NTHS4111PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 3300mA, 30V, 1206A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3300mA, 30V, 1206A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHS4111PT1G can be used for catalog matching and distributor lookup.

P-Channel 30V 3.3A (Ta) 700mW (Ta) Surface Mount ChipFET™