MOSFET P-CH 20V 4.8A CHIPFET
Manufacturer: ON Semiconductor
Win Source Part Number: 097737-NTHS4101PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.8A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2100pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 34 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
P-Channel MOSFET, -20V, -4.8A, 34mΩ, SMD Product overview: NTHS4101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, -4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, -4.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHS4101PT1G can be used for catalog matching and distributor lookup.
P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™
P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™
P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™
P CHANNEL MOSFET, -20V, 4.8A, 1206A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.3W RoHS Compliant: Yes
MOSFET, P CH, -20V, -4.8A, CHIPFET-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; PowerRoHS Compliant: Yes
MOSFET P-CH 20V 4.8A CHIPFET
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTHS4101PT1G | 097737-NTHS4101PT1G | 278-NTHS4101PT1G | NTHS4101PT1GOSTR-ND | 83H7829 | 81Y7044 | NTHS4101PT1G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS4101PT1G | P-Channel SMD -20V -4.8A MOSFET Transistor | Single FETs, MOSFETs | P Channel Mosfet, -20V, 4.8A, 1206A, Full Reel; Channel Type Onsemi | Mosfet, P Ch, -20V, -4.8A, Chipfet-8; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 4800 milliamps | 4800 milliamps | -4800 milliamps | ||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |
