onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHS2101PT1G NTHS2101PT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 102636-NTHS2101PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.4A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 30nC @ 4.5V
Max Input Capacitance: 2400pF @ 6.4V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.4A, 4.5V
Alternative Parts (Cross-Reference): SI5445BDC-T1-E3; NTHS5445T1; NTHS2101P;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

P-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™

Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET, ChipFET, 3000-REEL Product overview: NTHS2101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8V, 7.5A, 25 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 7.5A, 25 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHS2101PT1G can be used for catalog matching and distributor lookup.