MOSFET N-CH 650V 40A TO247-3
Manufacturer: onsemi
Win Source Part Number: 1324080-NTHL082N65S3
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 313W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NTHL082N65S3F-ND,NTH
Base Product Number: NTHL082
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247, 450-TUBE Product overview: NTHL082N65S3F from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 40 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 40 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL082N65S3F can be used for catalog matching and distributor lookup.
N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-247-3
MOSFET SUPERFET3 650V TO247 N-CHANNEL
MOSFET N-CH 650V 40A TO247-3
MOSFET, N-CH, 650V, 40A, TO-247AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTHL082N65S3F | 1324080-NTHL082N65S3F | 278-NTHL082N65S3F | NTHL082N65S3FOS-ND | NTHL082N65S3F | NTHL082N65S3F | 48AC1735 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 650 V 40 A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 40A, To-247Ab-3; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | ||||||
| IDSS | 40000 milliamps | 40000 milliamps | |||||
| PD | 313000 milliwatts | 313000 milliwatts |
