onsemi Single FETs, MOSFETs NTHL080N120SC1

Description
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
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Description
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
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Datasheet
Datasheet Summary
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The NTHL080N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source Voltage (VDS) of 1200 V and a typical On-Resistance (RDS(on)) of 80 mOc at a gate voltage of 20 V. The device has a low total gate charge of 56 nC, which contributes to efficient switching performance. It is capable of continuous drain currents of 31 A at 25¬8C and 22 A at 100¬8C, with a maximum power dissipation of 178 W at 25¬8C. The MOSFET operates within a temperature range of -55¬8C to +175¬8C and is housed in a TO-247-3 package. It is RoHS compliant and halide-free, making it suitable for environmentally conscious designs. Typical applications include uninterruptible power supplies (UPS), DC-DC converters, and boost inverters. The device has been 100% UIL tested, ensuring reliability in demanding applications.

Datasheet Summary
Powered by GS/AI

The NTHL080N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source Voltage (VDS) of 1200 V and a typical On-Resistance (RDS(on)) of 80 mOc at a gate voltage of 20 V. The device has a low total gate charge of 56 nC, which contributes to efficient switching performance. It is capable of continuous drain currents of 31 A at 25¬8C and 22 A at 100¬8C, with a maximum power dissipation of 178 W at 25¬8C. The MOSFET operates within a temperature range of -55¬8C to +175¬8C and is housed in a TO-247-3 package. It is RoHS compliant and halide-free, making it suitable for environmentally conscious designs. Typical applications include uninterruptible power supplies (UPS), DC-DC converters, and boost inverters. The device has been 100% UIL tested, ensuring reliability in demanding applications.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTHL080N120SC1OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTHL080N120SC1OS-ND
Single FETs, MOSFETs NTHL080N120SC1OS-ND
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore
1200 V MOSFET Transistor
278-NTHL080N120SC1
1200 V MOSFET Transistor 278-NTHL080N120SC1
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NTHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL080N120SC1 can be used for catalog matching and distributor lookup.

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NTHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL080N120SC1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325358-NTHL080N120SC1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325358-NTHL080N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325358-NTHL080N120SC1
Manufacturer: onsemi Win Source Part Number: 1325358-NTHL080N120S C1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 450 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: NTHL080N120SC1OS Base Product Number: NTHL080 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325358-NTHL080N120SC1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NTHL080N120SC1OS
Base Product Number: NTHL080
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - NTHL080N120SC1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTHL080N120SC1
Single FETs, MOSFETs NTHL080N120SC1
SICFET N-CH 1200V 44A TO247-3

SICFET N-CH 1200V 44A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHL080N120SC1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHL080N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHL080N120SC1
SICFET N-CH 1200V 44A TO247-3

SICFET N-CH 1200V 44A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SIC MOS 80MW 1200V

MOSFET SIC MOS 80MW 1200V

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTHL080N120SC1OS-ND 278-NTHL080N120SC1 1325358-NTHL080N120SC1 NTHL080N120SC1 NTHL080N120SC1 NTHL080N120SC1
Product Name Single FETs, MOSFETs 1200 V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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