The NTHL080N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It features a maximum Drain-to-Source Voltage (VDS) of 1200 V and a typical On-Resistance (RDS(on)) of 80 mOc at a gate voltage of 20 V. The device has a low total gate charge of 56 nC, which contributes to efficient switching performance. It is capable of continuous drain currents of 31 A at 25¬8C and 22 A at 100¬8C, with a maximum power dissipation of 178 W at 25¬8C. The MOSFET operates within a temperature range of -55¬8C to +175¬8C and is housed in a TO-247-3 package. It is RoHS compliant and halide-free, making it suitable for environmentally conscious designs. Typical applications include uninterruptible power supplies (UPS), DC-DC converters, and boost inverters. The device has been 100% UIL tested, ensuring reliability in demanding applications.
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NTHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL080N120SC1 can be used for catalog matching and distributor lookup.
Manufacturer: onsemi
Win Source Part Number: 1325358-NTHL080N120S
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NTHL080N120SC1OS
Base Product Number: NTHL080
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
SICFET N-CH 1200V 44A TO247-3
SICFET N-CH 1200V 44A TO247-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTHL080N120SC1OS-ND | 278-NTHL080N120SC1 | 1325358-NTHL080N120SC1 | NTHL080N120SC1 | NTHL080N120SC1 | NTHL080N120SC1 |
| Product Name | Single FETs, MOSFETs | 1200 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
