SILICON CARBIDE (SIC) MOSFET - E
SILICON CARBIDE (SIC) MOSFET - E
MOSFET, N-CH, 650V, 38A, TO-247; MOSFET Module Configuration:Single
SILICON CARBIDE (SIC) MOSFET - E
| DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 5556-NTHL075N065SC1-ND | NTHL075N065SC1 | 57AK6413 | NTHL075N065SC1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 38A, To-247; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | MOSFET (Metal Oxide) | ||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 |
| V(BR)DSS | 650 volts |
