SILICON CARBIDE (SIC) MOSFET - E
SILICON CARBIDE (SIC) MOSFET - E
MOSFET, N-CH, 650V, 38A, TO-247; MOSFET Module Configuration:Single
SILICON CARBIDE (SIC) MOSFET - E
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTHL075N065SC1 | 5556-NTHL075N065SC1-ND | 57AK6413 | NTHL075N065SC1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 38A, To-247; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | Silicon Carbide | ||
| V(BR)DSS | 650 volts | |||
| IDSS | 38000 milliamps | 38000 milliamps |