onsemi Single FETs, MOSFETs NTHL040N120SC1

Description
N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 5556-NTHL040N120SC1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NTHL040N120SC1-ND
Single FETs, MOSFETs 5556-NTHL040N120SC1-ND
N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3

N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore, Singapore
1200 V MOSFET Transistor
278-NTHL040N120SC1
1200 V MOSFET Transistor 278-NTHL040N120SC1
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE Product overview: NTHL040N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL040N120SC1 can be used for catalog matching and distributor lookup.

Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE Product overview: NTHL040N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL040N120SC1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1357006-NTHL040N120SC1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1357006-NTHL040N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1357006-NTHL040N120SC1
Win Source Part Number: 1357006-NTHL040N120S C1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 46 pct. MSL Level: Not Applicable Mfr: onsemi Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Base Product Number: NTHL040 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Vgs (Max): +25V, -15V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V Power Dissipation (Max): 348W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1357006-NTHL040N120SC1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: Not Applicable
Mfr: onsemi
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: NTHL040
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Vgs (Max): +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Power Dissipation (Max): 348W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHL040N120SC1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHL040N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHL040N120SC1
SICFET N-CH 1200V 60A TO247-3

SICFET N-CH 1200V 60A TO247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi - 74AH4839 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi
74AH4839
Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi 74AH4839
MOSFET, N-CH, 1.2KV, 60A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 60A, TO-247 ROHS COMPLIANT: YES

Supplier's Site
Sic Mosfet, N-Ch, 20V, 60A, To-247; Mosfet Module Configuration Onsemi - 91AH8484 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N-Ch, 20V, 60A, To-247; Mosfet Module Configuration Onsemi
91AH8484
Sic Mosfet, N-Ch, 20V, 60A, To-247; Mosfet Module Configuration Onsemi 91AH8484
SIC MOSFET, N-CH, 20V, 60A, TO-247; MOSFET Module Configuration:Single ; Channel Type:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:348W RoHS Compliant: Yes

SIC MOSFET, N-CH, 20V, 60A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:348W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 5556-NTHL040N120SC1-ND 278-NTHL040N120SC1 1357006-NTHL040N120SC1 NTHL040N120SC1 74AH4839 91AH8484
Product Name Single FETs, MOSFETs 1200 V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi Sic Mosfet, N-Ch, 20V, 60A, To-247; Mosfet Module Configuration Onsemi
Polarity N-Channel N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-3; TO-247 TO-3; TO-247
TJ -55 C (-67 F)
Unlock Full Specs
to access all available technical data