N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE Product overview: NTHL040N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL040N120SC1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1357006-NTHL040N120S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: Not Applicable
Mfr: onsemi
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: NTHL040
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Vgs (Max): +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Power Dissipation (Max): 348W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
SICFET N-CH 1200V 60A TO247-3
MOSFET, N-CH, 1.2KV, 60A, TO-247 ROHS COMPLIANT: YES
SIC MOSFET, N-CH, 20V, 60A, TO-247; MOSFET Module Configuration:Single
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5556-NTHL040N120SC1-ND | 278-NTHL040N120SC1 | 1357006-NTHL040N120SC1 | NTHL040N120SC1 | 74AH4839 | 91AH8484 |
| Product Name | Single FETs, MOSFETs | 1200 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi | Sic Mosfet, N-Ch, 20V, 60A, To-247; Mosfet Module Configuration Onsemi |
| Polarity | N-Channel | N-Channel | ||||
| Transistor Technology / Material | Silicon Carbide | |||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-3; TO-247 | |
| TJ | -55 C (-67 F) |