SIC MOS TO247-3L 650V Product overview: NTHL025N065SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHL025N065SC1 can be used for catalog matching and distributor lookup.
Manufacturer: onsemi
Category: Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
SIC MOS TO247-3L 650V
SIC MOS TO247-3L 650V
SIC MOSFET, N-CH, 18V, 99A, TO-247; MOSFET Module Configuration:Single
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTHL025N065SC1 | 2485818P | 5556-NTHL025N065SC1-ND | NTHL025N065SC1 | 32AK4627 | |
| Product Name | 650V MOSFET Transistor | Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, N-Ch, 18V, 99A, To-247; Mosfet Module Configuration Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts | |||||
| Transconductance | 0.0270 kS | |||||
| PD | 348 milliwatts | 348000 milliwatts |
