onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD5902T1 NTHD5902T1

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060645-NTHD5902T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.5 nC @ 10V Maximum Rds On at Id,Vgs: 85 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 060645-NTHD5902T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.5 nC @ 10V Maximum Rds On at Id,Vgs: 85 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD5902T1 - 060645-NTHD5902T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD5902T1
060645-NTHD5902T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD5902T1 060645-NTHD5902T1
Manufacturer: ON Semiconductor Win Source Part Number: 060645-NTHD5902T1 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.5 nC @ 10V Maximum Rds On at Id,Vgs: 85 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060645-NTHD5902T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.5 nC @ 10V
Maximum Rds On at Id,Vgs: 85 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060645-NTHD5902T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD5902T1
Polarity N-Channel
V(BR)DSS 30 volts
PD 1100 milliwatts
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