onsemi P-Channel Dual Schottky -20V MOSFET Transistor NTHD4P02FT1G

Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL Product overview: NTHD4P02FT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, Schottky, -20V, -3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, Schottky, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTHD4P02FT1G can be used for catalog matching and distributor lookup.

P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™

P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™

Manufacturer: ON Semiconductor
Win Source Part Number: 097780-NTHD4P02FT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Tj)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 300pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 155 mOhm @ 2.2A, 4.5V
Alternative Parts (Cross-Reference): SI5855CDC-T1-E3; NTHD4P02FT1;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs