Dual N-Ch MOSFET 20V 4.1A 75mR SMD Product overview: NTHD4508NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 20V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 20V, 4.1A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD4508NT1G can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 3A CHIPFET
Manufacturer: ON Semiconductor
Win Source Part Number: 060643-NTHD4508NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.13W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Max Input Capacitance: 180pF @ 10V
Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices
Mosfet Array 2 N-Channel (Dual) 20V 3A 1.13W Surface Mount ChipFET™
Mosfet Array 2 N-Channel (Dual) 20V 3A 1.13W Surface Mount ChipFET™
Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R
DUAL N CHANNEL MOSFET, 20V, 1206A, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.1mA; On Resistance Rds(on):0.06ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:2.1WRoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.1A; On Resistance Rds(on):0.06ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET, DUAL N CH, 20V, 0.06OHM, 4.1A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; RoHS Compliant: Yes
MOSFET 2N-CH 20V 3A CHIPFET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NTHD4508NT1G | NTHD4508NT1G | 060643-NTHD4508NT1G | NTHD4508NT1GOSCT-ND | 598-NTHD4508NT1G | NTHD4508NT1G | 98H0962 | 10N9580 | 90W9310 | NTHD4508NT1G |
| Product Name | Dual SMD 20V 4.1A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4508NT1G | FET, MOSFET Arrays | Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R | MOSFET | Dual N Channel Mosfet, 20V, 1206A, Full Reel; Transistor Polarity Onsemi | Dual N Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi | Mosfet, Dual N Ch, 20V, 0.06Ohm, 4.1A; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||||
| PD | 2100 milliwatts | 1130 milliwatts | 1130 milliwatts | 2100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts |
