Mosfet Array 2 P-Channel (Dual) 20V 2.9A 1.1W Surface Mount ChipFET™
Mosfet Array 2 P-Channel (Dual) 20V 2.9A 1.1W Surface Mount ChipFET™
Mosfet Array 2 P-Channel (Dual) 20V 2.9A 1.1W Surface Mount ChipFET™
Dual P-Ch JFET -20V, 2.9A, 120mΩ, ChipFET Product overview: NTHD4102PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, -20V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, 2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD4102PT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025768-NTHD4102PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: NTHD4102P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 8.6nC @ 4.5V
Max Input Capacitance: 750pF @ 16V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 4.5V
Alternative Parts (Cross-Reference): Si5935CDC-T1-E3; Si5935CDC; SI5935CDC-T1-GE3; Si5933DC-E3;
Introduction Date: July 11, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
MOSFET -20V -4.1A Dual P-Channel
MOSFET 2P-CH 20V 2.9A CHIPFET
MOSFET, DUAL P CH, -20V, -2.9A, CHIPFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1206A, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.064ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1206A; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.064ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 20V 2.9A CHIPFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTHD4102PT1GOSDKR-ND | 289-NTHD4102PT1G | 025768-NTHD4102PT1G | NTHD4102PT1G | NTHD4102PT1G | 81Y7043 | 83H7827 | NTHD4102PT1G |
| Product Name | FET, MOSFET Arrays | Dual -20V 2.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD4102PT1G | MOSFET | FET, MOSFET Arrays | Mosfet, Dual P Ch, -20V, -2.9A, Chipfet; Transistor Polarity Onsemi | P Channel Mosfet, -20V, 1206A, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 8-SMD, Flat Leads | SOT3; ChipFET | 8-SMD, Flat Lead | TO-3 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| PD | 1100 milliwatts | 1100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 20 volts | 20 volts |
