onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G NTHD3102CT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 025767-NTHD3102CT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NTHD3102 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.1A Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 7.9nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3; Introduction Date: May 04, 2005 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G - 025767-NTHD3102CT1G - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - NTHD3102CT1GOSCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - NTHD3102CT1GOSTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - NTHD3102CT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3102CT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi - 09R9653 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Dual N/p Channel Mosfet, 20V, 1206A, Full Reel; Transistor Polarity Onsemi - 42K2442 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 025767-NTHD3102CT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NTHD3102 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.1A Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 7.9nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3; Introduction Date: May 04, 2005 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G - 025767-NTHD3102CT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G
025767-NTHD3102CT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G 025767-NTHD3102CT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025767-NTHD3102CT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NTHD3102 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A, 3.1A Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 7.9nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3; Introduction Date: May 04, 2005 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 025767-NTHD3102CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTHD3102
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.1A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 7.9nC @ 4.5V
Max Input Capacitance: 510pF @ 10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3;
Introduction Date: May 04, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - NTHD3102CT1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTHD3102CT1GOSCT-ND
FET, MOSFET Arrays NTHD3102CT1GOSCT-ND
Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

Buy Now Datasheet
FET, MOSFET Arrays - NTHD3102CT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTHD3102CT1GOSTR-ND
FET, MOSFET Arrays NTHD3102CT1GOSTR-ND
Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

Buy Now Datasheet
FET, MOSFET Arrays - NTHD3102CT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTHD3102CT1G
FET, MOSFET Arrays NTHD3102CT1G
MOSFET N/P-CH 20V 4A/3.1A 1206A

MOSFET N/P-CH 20V 4A/3.1A 1206A

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTHD3102CT1G
MOSFET NTHD3102CT1G
MOSFET 20V 5.5A/-4.2A Complementary

MOSFET 20V 5.5A/-4.2A Complementary

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3102CT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHD3102CT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHD3102CT1G
MOSFET N/P-CH 20V 4A CHIPFET

MOSFET N/P-CH 20V 4A CHIPFET

Supplier's Site
Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi - 09R9653 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi
09R9653
Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi 09R9653
DUAL N/P CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

Supplier's Site
Dual N/p Channel Mosfet, 20V, 1206A, Full Reel; Transistor Polarity Onsemi - 42K2442 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 20V, 1206A, Full Reel; Transistor Polarity Onsemi
42K2442
Dual N/p Channel Mosfet, 20V, 1206A, Full Reel; Transistor Polarity Onsemi 42K2442
DUAL N/P CHANNEL MOSFET, 20V, 1206A, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 20V, 1206A, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 025767-NTHD3102CT1G NTHD3102CT1GOSCT-ND NTHD3102CT1G NTHD3102CT1G NTHD3102CT1G 09R9653
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi
Polarity P-Channel P-Channel; N and P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; ChipFET 8-SMD, Flat Leads 8-SMD, Flat Lead TO-3
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