MOSFET N/P-CH 20V 4A/3.1A 1206A
Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™
Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™
Manufacturer: ON Semiconductor
Win Source Part Number: 025767-NTHD3102CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTHD3102
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.1A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 7.9nC @ 4.5V
Max Input Capacitance: 510pF @ 10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3;
Introduction Date: May 04, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET 20V 5.5A/-4.2A Complementary
DUAL N/P CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 20V, 1206A, FULL REEL; Transistor Polarity:Complementa
MOSFET N/P-CH 20V 4A CHIPFET
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTHD3102CT1G | NTHD3102CT1GOSCT-ND | 025767-NTHD3102CT1G | NTHD3102CT1G | 09R9653 | NTHD3102CT1G |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3102CT1G | MOSFET | Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 4000 milliamps | 4000 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
