onsemi FET, MOSFET Arrays NTHD3102CT1G

Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

Mosfet Array N and P-Channel 20V 4A, 3.1A 1.1W Surface Mount ChipFET™

MOSFET N/P-CH 20V 4A/3.1A 1206A

Dual N/P-Ch MOSFET, 20V, 3.1A, 45mR Rds On, SMD Product overview: NTHD3102CT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 20V, 3.1A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD3102CT1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 025767-NTHD3102CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTHD3102
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A, 3.1A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 7.9nC @ 4.5V
Max Input Capacitance: 510pF @ 10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.4A, 4.5V
Alternative Parts (Cross-Reference): Si5515DC-T1; Si5515DC-T1-GE3; Si5515DC; Si5515DC-T1-E3;
Introduction Date: May 04, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient