onsemi Single FETs, MOSFETs NTHD3101FT1G

Description
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
  • Single FETs, MOSFETs - NTHD3101FT1GOSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTHD3101FT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G - 025766-NTHD3101FT1G - Win Source Electronics
    Win Source Electronics
  • P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi - 09R9652 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3101FT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTHD3101FT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTHD3101FT1GOSTR-ND
Single FETs, MOSFETs NTHD3101FT1GOSTR-ND
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™

P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - NTHD3101FT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTHD3101FT1G
Single FETs, MOSFETs NTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET

MOSFET P-CH 20V 3.2A CHIPFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G - 025766-NTHD3101FT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G
025766-NTHD3101FT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G 025766-NTHD3101FT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025766-NTHD3101FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A (Tj) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 7.4nC @ 4.5V Max Input Capacitance: 680pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 025766-NTHD3101FT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 7.4nC @ 4.5V
Max Input Capacitance: 680pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTHD3101FT1G
MOSFET NTHD3101FT1G
MOSFET -20V -4.4A P-Channel w/4.1A Schottky

MOSFET -20V -4.4A P-Channel w/4.1A Schottky

Buy Now Datasheet
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi - 09R9652 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi
09R9652
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi 09R9652
P CHANNEL MOSFET, -20V, 4.4A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 4.4A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3101FT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHD3101FT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET

MOSFET P-CH 20V 3.2A CHIPFET

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTHD3101FT1GOSTR-ND NTHD3101FT1G 025766-NTHD3101FT1G NTHD3101FT1G 09R9652 NTHD3101FT1G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G MOSFET P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type 8-SMD, Flat Leads 8-SMD, Flat Lead SOT3; ChipFET TO-3 8-SMD, Flat Lead
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
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