onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G NTHD3101FT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 025766-NTHD3101FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A (Tj) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 7.4nC @ 4.5V Max Input Capacitance: 680pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G - 025766-NTHD3101FT1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTHD3101FT1GOSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTHD3101FT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3101FT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi - 09R9652 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 025766-NTHD3101FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A (Tj) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 7.4nC @ 4.5V Max Input Capacitance: 680pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G - 025766-NTHD3101FT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G
025766-NTHD3101FT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G 025766-NTHD3101FT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025766-NTHD3101FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A (Tj) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 7.4nC @ 4.5V Max Input Capacitance: 680pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 025766-NTHD3101FT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 7.4nC @ 4.5V
Max Input Capacitance: 680pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTHD3101FT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTHD3101FT1GOSTR-ND
Single FETs, MOSFETs NTHD3101FT1GOSTR-ND
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™

P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™

Buy Now Datasheet
Single FETs, MOSFETs - NTHD3101FT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTHD3101FT1G
Single FETs, MOSFETs NTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET

MOSFET P-CH 20V 3.2A CHIPFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD3101FT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHD3101FT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHD3101FT1G
MOSFET P-CH 20V 3.2A CHIPFET

MOSFET P-CH 20V 3.2A CHIPFET

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTHD3101FT1G
MOSFET NTHD3101FT1G
MOSFET -20V -4.4A P-Channel w/4.1A Schottky

MOSFET -20V -4.4A P-Channel w/4.1A Schottky

Buy Now Datasheet
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi - 09R9652 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi
09R9652
P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi 09R9652
P CHANNEL MOSFET, -20V, 4.4A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 4.4A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 025766-NTHD3101FT1G NTHD3101FT1GOSTR-ND NTHD3101FT1G NTHD3101FT1G NTHD3101FT1G 09R9652
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 1100 milliwatts 1100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data