Manufacturer: ON Semiconductor
Win Source Part Number: 025766-NTHD3101FT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Tj)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 7.4nC @ 4.5V
Max Input Capacitance: 680pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 3.2A CHIPFET
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
MOSFET -20V -4.4A P-Channel w/4.1A Schottky
MOSFET P-CH 20V 3.2A CHIPFET
P CHANNEL MOSFET, -20V, 4.4A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025766-NTHD3101FT1G | NTHD3101FT1G | NTHD3101FT1GOSTR-ND | NTHD3101FT1G | NTHD3101FT1G | 09R9652 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3101FT1G | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -20V, 4.4A, 1206A; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
