Dual N/P-Channel MOSFET, 20V, 3.2A, 64mR, ChipFET Product overview: NTHD3100CT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 3.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD3100CT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025765-NTHD3100CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A, 3.2A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 2.3nC @ 4.5V
Max Input Capacitance: 165pF @ 10V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Portable Devices, Motor Drive & Control
ON Semiconductor, NTHD3100CT1G
ON Semiconductor, NTHD3100CT1G
ON Semiconductor, NTHD3100CT1G
Mosfet Array N and P-Channel 20V 2.9A, 3.2A 1.1W Surface Mount ChipFET™
Mosfet Array N and P-Channel 20V 2.9A, 3.2A 1.1W Surface Mount ChipFET™
Mosfet Array N and P-Channel 20V 2.9A, 3.2A 1.1W Surface Mount ChipFET™
DUAL P CHANNEL MOSFET, -20V, 1206A, FULL REEL; Transistor Polarity:Complementa
MOSFET, N & P-CH, -20V, -3.9A, CHIPFET; Transistor Polarity:N and P Complement; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes
MOSFET N/P-CH 20V 2.9A CHIPFET
MOSFET 20V +3.9A/-4.4A Complementary
MOSFET N/P-CH 20V CHIPFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-NTHD3100CT1G | 025765-NTHD3100CT1G | 1868208 | 1868208P | NTHD3100CT1GOSCT-ND | 45J2138 | 50AC6487 | NTHD3100CT1G | NTHD3100CT1G | NTHD3100CT1G |
| Product Name | P-Channel Dual 20V 3.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD3100CT1G | Bipolar Transistors | Bipolar Transistors | FET, MOSFET Arrays | Dual P Channel Mosfet, -20V, 1206A, Full Reel; Transistor Polarity Onsemi | Mosfet, N & P-Ch, -20V, -3.9A, Chipfet; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; N and P-Channel | ||||||
| PD | 1100 milliwatts | 1100 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||||
| Package Type | SOT3; ChipFET | Chipfet | ChipFET | 8-SMD, Flat Leads | TO-3 | TO-3 | 8-SMD, Flat Lead |
