onsemi FET, MOSFET Arrays NTHD2102PT1G

Description
MOSFET 2P-CH 8V 3.4A CHIPFET
Request a Quote Datasheet
Description
MOSFET 2P-CH 8V 3.4A CHIPFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTHD2102PT1G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTHD2102PT1G
FET, MOSFET Arrays NTHD2102PT1G
MOSFET 2P-CH 8V 3.4A CHIPFET

MOSFET 2P-CH 8V 3.4A CHIPFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD2102PT1G - 101454-NTHD2102PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD2102PT1G
101454-NTHD2102PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD2102PT1G 101454-NTHD2102PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 101454-NTHD2102PT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ChipFET Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 3.4A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 16nC @ 2.5V Max Input Capacitance: 715pF @ 6.4V Maximum Rds On at Id,Vgs: 58 mOhm @ 3.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 101454-NTHD2102PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 16nC @ 2.5V
Max Input Capacitance: 715pF @ 6.4V
Maximum Rds On at Id,Vgs: 58 mOhm @ 3.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - NTHD2102PT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTHD2102PT1GOSTR-ND
FET, MOSFET Arrays NTHD2102PT1GOSTR-ND
Mosfet Array 2 P-Channel (Dual) 8V 3.4A 1.1W Surface Mount ChipFET™

Mosfet Array 2 P-Channel (Dual) 8V 3.4A 1.1W Surface Mount ChipFET™

Buy Now Datasheet
Singapore
P-Channel Dual 8V 4.6A MOSFET Transistor
289-NTHD2102PT1G
P-Channel Dual 8V 4.6A MOSFET Transistor 289-NTHD2102PT1G
Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET, ChipFET, 3000-REEL Product overview: NTHD2102PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 8V, 4.6A, 62 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 8V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD2102PT1G can be used for catalog matching and distributor lookup.

Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET, ChipFET, 3000-REEL Product overview: NTHD2102PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 8V, 4.6A, 62 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 8V, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHD2102PT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTHD2102PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTHD2102PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTHD2102PT1G
MOSFET 2P-CH 8V 3.4A CHIPFET

MOSFET 2P-CH 8V 3.4A CHIPFET

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTHD2102PT1G 101454-NTHD2102PT1G NTHD2102PT1GOSTR-ND 289-NTHD2102PT1G NTHD2102PT1G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHD2102PT1G FET, MOSFET Arrays P-Channel Dual 8V 4.6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 8 volts 8 volts
IDSS 3400 milliamps
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